{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,12]],"date-time":"2025-10-12T02:22:32Z","timestamp":1760235752886,"version":"build-2065373602"},"reference-count":28,"publisher":"MDPI AG","issue":"9","license":[{"start":{"date-parts":[[2021,9,21]],"date-time":"2021-09-21T00:00:00Z","timestamp":1632182400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100001871","name":"Funda\u00e7\u00e3o para a Ci\u00eancia e a Tecnologia","doi-asserted-by":"publisher","award":["SFRH\/BD\/144376\/2019","DFA\/BD\/8335\/2020","PTDC\/NANMAT\/30812\/2017"],"award-info":[{"award-number":["SFRH\/BD\/144376\/2019","DFA\/BD\/8335\/2020","PTDC\/NANMAT\/30812\/2017"]}],"id":[{"id":"10.13039\/501100001871","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Micromachines"],"abstract":"<jats:p>Resistive switching behaviour has been demonstrated to be a common characteristic to many materials. In this regard, research teams to date have produced a plethora of different devices exhibiting diverse behaviour, but when system design is considered, finding a \u2018one-model-fits-all\u2019 solution can be quite difficult, or even impossible. However, it is in the interest of the community to achieve more general modelling tools for design that allows a quick model update as devices evolve. Laying the grounds with such a principle, this paper presents an artificial neural network learning approach to resistive switching modelling. The efficacy of the method is demonstrated firstly with two simulated devices and secondly with a 4\u00a0\u03bcm2 amorphous IGZO device. For the amorphous IGZO device, a normalized root-mean-squared error (NRMSE) of 5.66 \u00d7 10\u22123 is achieved with a [2,\u00a050,50\u00a0,1] network structure, representing a good balance between model complexity and accuracy. A brief study on the number of hidden layers and neurons and its effect on network performance is also conducted with the best NRMSE reported at 4.63 \u00d7 10\u22123. The low error rate achieved in both simulated and real-world devices is a good indicator that the presented approach is flexible and can suit multiple device types.<\/jats:p>","DOI":"10.3390\/mi12091132","type":"journal-article","created":{"date-parts":[[2021,9,21]],"date-time":"2021-09-21T22:34:01Z","timestamp":1632263641000},"page":"1132","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":3,"title":["A Neural Network Approach towards Generalized Resistive Switching Modelling"],"prefix":"10.3390","volume":"12","author":[{"given":"Guilherme","family":"Carvalho","sequence":"first","affiliation":[{"name":"Institute for Systems and Computer Engineering, Technology and Science (INESC TEC)\u2014INESC Technology and Science and FEUP\u2014Faculdade de Engenharia, Universidade do Porto, Campus da FEUP, Rua Dr. Roberto Frias 378, 4200-465 Porto, Portugal"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2833-2942","authenticated-orcid":false,"given":"Maria","family":"Pereira","sequence":"additional","affiliation":[{"name":"CENIMAT\/i3N, Departamento de Ci\u00eancias dos Materiais (DCM) and Center of Excellence in Microelectronics and Optoelectronics Processes of the Institute for New Technologies\u2019 Development (CEMOP\/UNINOVA), Faculdade de Ci\u00eancias e Tecnologia (FCT NOVA), Universidade NOVA de Lisboa, 2829-516 Caparica, Portugal"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-8422-5762","authenticated-orcid":false,"given":"Asal","family":"Kiazadeh","sequence":"additional","affiliation":[{"name":"CENIMAT\/i3N, Departamento de Ci\u00eancias dos Materiais (DCM) and Center of Excellence in Microelectronics and Optoelectronics Processes of the Institute for New Technologies\u2019 Development (CEMOP\/UNINOVA), Faculdade de Ci\u00eancias e Tecnologia (FCT NOVA), Universidade NOVA de Lisboa, 2829-516 Caparica, Portugal"}]},{"given":"V\u00edtor Grade","family":"Tavares","sequence":"additional","affiliation":[{"name":"Institute for Systems and Computer Engineering, Technology and Science (INESC TEC)\u2014INESC Technology and Science and FEUP\u2014Faculdade de Engenharia, Universidade do Porto, Campus da FEUP, Rua Dr. Roberto Frias 378, 4200-465 Porto, Portugal"}]}],"member":"1968","published-online":{"date-parts":[[2021,9,21]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"2669","DOI":"10.1063\/1.1702530","article-title":"Low-frequency negative resistance in thin anodic oxide films","volume":"33","author":"Hickmott","year":"1962","journal-title":"J. Appl. Phys."},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"1811","DOI":"10.1039\/D0NA00100G","article-title":"Research progress on solutions to the sneak path issue in memristor crossbar arrays","volume":"2","author":"Shi","year":"2020","journal-title":"Nanoscale Adv."},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1186\/s11671-017-1831-4","article-title":"Three-dimensional integrated circuit (3D IC) key technology: Through-silicon via (TSV)","volume":"12","author":"Shen","year":"2017","journal-title":"Nanoscale Res. Lett."},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"74","DOI":"10.1038\/nature22994","article-title":"Three-dimensional integration of nanotechnologies for computing and data storage on a single chip","volume":"547","author":"Shulaker","year":"2017","journal-title":"Nature"},{"key":"ref_5","doi-asserted-by":"crossref","unstructured":"Ho, C., Chang, S.C., Huang, C.Y., Chuang, Y.C., Lim, S.F., Hsieh, M.H., Chang, S.C., and Liao, H.H. (2017, January 2\u20136). Integrated HfO 2-RRAM to achieve highly reliable, greener, faster, cost-effective, and scaled devices. Proceedings of the 2017 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA.","DOI":"10.1109\/IEDM.2017.8268314"},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"209","DOI":"10.1109\/PROC.1976.10092","article-title":"Memristive devices and systems","volume":"64","author":"Chua","year":"1976","journal-title":"Proc. IEEE"},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"80","DOI":"10.1038\/nature06932","article-title":"The missing memristor found","volume":"453","author":"Strukov","year":"2008","journal-title":"Nature"},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"661","DOI":"10.1088\/0143-0807\/30\/4\/001","article-title":"The elusive memristor: Properties of basic electrical circuits","volume":"30","author":"Joglekar","year":"2009","journal-title":"Eur. J. Phys."},{"key":"ref_9","first-page":"210","article-title":"SPICE Model of Memristor with Nonlinear Dopant Drift","volume":"18","author":"Biolek","year":"2009","journal-title":"Radioengineering"},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"3099","DOI":"10.1109\/TED.2011.2158004","article-title":"A versatile memristor model with nonlinear dopant kinetics","volume":"58","author":"Prodromakis","year":"2011","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"074508","DOI":"10.1063\/1.3236506","article-title":"Switching dynamics in titanium dioxide memristive devices","volume":"106","author":"Pickett","year":"2009","journal-title":"J. Appl. Phys."},{"key":"ref_12","doi-asserted-by":"crossref","first-page":"1436","DOI":"10.1109\/LED.2011.2163292","article-title":"A memristor device model","volume":"32","author":"Yakopcic","year":"2011","journal-title":"IEEE Electron Device Lett."},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"20635","DOI":"10.1039\/C8CP03492C","article-title":"Overwhelming coexistence of negative differential resistance effect and RRAM","volume":"20","author":"Guo","year":"2018","journal-title":"Phys. Chem. Chem. Phys."},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"15","DOI":"10.1109\/TNANO.2015.2493960","article-title":"Stochasticity modeling in memristors","volume":"15","author":"Naous","year":"2015","journal-title":"IEEE Trans. Nanotechnol."},{"key":"ref_15","doi-asserted-by":"crossref","first-page":"211","DOI":"10.1109\/TCSI.2012.2215714","article-title":"TEAM: Threshold adaptive memristor model","volume":"60","author":"Kvatinsky","year":"2012","journal-title":"IEEE Trans. Circuits Syst. I Regul. Pap."},{"key":"ref_16","first-page":"786","article-title":"VTEAM: A general model for voltage-controlled memristors","volume":"62","author":"Kvatinsky","year":"2015","journal-title":"IEEE Trans. Circuits Syst. II Express Briefs"},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"3151","DOI":"10.1109\/TCAD.2018.2791468","article-title":"A data-driven verilog-a reram model","volume":"37","author":"Messaris","year":"2018","journal-title":"IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst."},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"105","DOI":"10.3390\/electronicmat2020009","article-title":"Towards Sustainable Crossbar Artificial Synapses with Zinc-Tin Oxide","volume":"2","author":"Silva","year":"2021","journal-title":"Electron. Mater."},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"2000242","DOI":"10.1002\/aelm.202000242","article-title":"Noble-Metal-Free Memristive Devices Based on IGZO for Neuromorphic Applications","volume":"6","author":"Pereira","year":"2020","journal-title":"Adv. Electron. Mater."},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"1652","DOI":"10.1109\/LED.2018.2869072","article-title":"Impact of RTN on pattern recognition accuracy of RRAM-based synaptic neural network","volume":"39","author":"Chai","year":"2018","journal-title":"IEEE Electron. Device Lett."},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"100379","DOI":"10.1016\/j.cosrev.2021.100379","article-title":"A survey on deep learning and its applications","volume":"40","author":"Dong","year":"2021","journal-title":"Comput. Sci. Rev."},{"key":"ref_22","doi-asserted-by":"crossref","unstructured":"Bahubalindruni, G., Tavares, V.G., Barquinha, P., Duarte, C., Martins, R., Fortunato, E., and de Oliveira, P.G. (2012, January 19\u201321). Basic analog circuits with a-GIZO thin-film transistors: Modeling and simulation. Proceedings of the 2012 International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD), Seville, Spain.","DOI":"10.1109\/SMACD.2012.6339389"},{"key":"ref_23","unstructured":"Gambuzza, L.V., Samardzic, N., Dautovic, S., Xibilia, M.G., Graziani, S., Fortuna, L., Stojanovic, G., and Frasca, M. (2013, January 28\u201330). A data driven model of TiO2 printed memristors. Proceedings of the 2013 8th International Conference on Electrical and Electronics Engineering (ELECO), Bursa, Turkey."},{"key":"ref_24","doi-asserted-by":"crossref","first-page":"52","DOI":"10.1016\/j.neunet.2019.08.026","article-title":"On the validity of memristor modeling in the neural network literature","volume":"121","author":"Pershin","year":"2020","journal-title":"Neural Netw."},{"key":"ref_25","unstructured":"Raissi, M., Perdikaris, P., and Karniadakis, G.E. (2018). Multistep neural networks for data-driven discovery of nonlinear dynamical systems. arXiv."},{"key":"ref_26","doi-asserted-by":"crossref","first-page":"695","DOI":"10.1016\/0038-1101(66)90097-9","article-title":"Field and thermionic-field emission in Schottky barriers","volume":"9","author":"Padovani","year":"1966","journal-title":"Solid-State Electron."},{"key":"ref_27","doi-asserted-by":"crossref","first-page":"11","DOI":"10.1109\/LED.2011.2171317","article-title":"Resistive Switching in HfO2 Probed by a Metal\u2013Insulator\u2013Semiconductor Bipolar Transistor","volume":"33","author":"Yalon","year":"2011","journal-title":"IEEE Electron. Device Lett."},{"key":"ref_28","doi-asserted-by":"crossref","first-page":"429","DOI":"10.1038\/nnano.2008.160","article-title":"Memristive switching mechanism for metal\/oxide\/metal nanodevices","volume":"3","author":"Yang","year":"2008","journal-title":"Nat. Nanotechnol."}],"container-title":["Micromachines"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/2072-666X\/12\/9\/1132\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T07:02:43Z","timestamp":1760166163000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/2072-666X\/12\/9\/1132"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021,9,21]]},"references-count":28,"journal-issue":{"issue":"9","published-online":{"date-parts":[[2021,9]]}},"alternative-id":["mi12091132"],"URL":"https:\/\/doi.org\/10.3390\/mi12091132","relation":{},"ISSN":["2072-666X"],"issn-type":[{"type":"electronic","value":"2072-666X"}],"subject":[],"published":{"date-parts":[[2021,9,21]]}}}