{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,28]],"date-time":"2026-04-28T17:27:59Z","timestamp":1777397279506,"version":"3.51.4"},"reference-count":65,"publisher":"MDPI AG","issue":"3","license":[{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Nanomaterials"],"abstract":"<jats:p>This work reports on the role of structure and composition on the determination of the performances of p-type SnOx TFTs with a bottom gate configuration deposited by rf magnetron sputtering at room temperature, followed by a post-annealed step up to 200 \u00b0C at different oxygen partial pressures (Opp) between 0% and 20% but where the p-type conduction was only observed between in a narrow window, from 2.8% to 3.8%. The role of structure and composition were evaluated by XRD and M\u00f6ssbauer spectroscopic studies that allows to identify the best phases\/compositions and thicknesses (around 12 nm) to be used to produce p-type TFTs with saturation mobility of 4.6 cm2 V\u22121 s\u22121 and on-off ratio above 7 \u00d7 104, operating at the enhancement mode with a saturation voltage of \u221210 V. Moreover, a brief overview is also presented concerning the present state of the existing developments in processing SnOx TFTs with different methods and using different device configurations.<\/jats:p>","DOI":"10.3390\/nano9030320","type":"journal-article","created":{"date-parts":[[2019,3,4]],"date-time":"2019-03-04T05:45:36Z","timestamp":1551678336000},"page":"320","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":30,"title":["Role of Structure and Composition on the Performances of P-Type Tin Oxide Thin-Film Transistors Processed at Low-Temperatures"],"prefix":"10.3390","volume":"9","author":[{"given":"Raquel","family":"Barros","sequence":"first","affiliation":[{"name":"CENIMAT\/I3N, Departamento de Ci\u00eancia dos Materiais, Faculdade de Ci\u00eancias e Tecnologia, FCT, Universidade Nova de Lisboa and CEMOP-UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal"},{"name":"Hovione, Campus do Lumiar, Edif\u00edcio S, Estrada do Pa\u00e7o do Lumiar, 1649-038 Lisboa, Portugal"}]},{"given":"Kachirayil J.","family":"Saji","sequence":"additional","affiliation":[{"name":"CENIMAT\/I3N, Departamento de Ci\u00eancia dos Materiais, Faculdade de Ci\u00eancias e Tecnologia, FCT, Universidade Nova de Lisboa and CEMOP-UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal"},{"name":"International School of Photonics, Cochin University of Science and Technology, Kochi \u2013 682 022, India"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6171-4099","authenticated-orcid":false,"given":"Jo\u00e3o C.","family":"Waerenborgh","sequence":"additional","affiliation":[{"name":"C2TN, DECN, Instituto Superior T\u00e9cnico, Universidade de Lisboa, 2695-066 Bobadela LRS, Portugal"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5446-2759","authenticated-orcid":false,"given":"Pedro","family":"Barquinha","sequence":"additional","affiliation":[{"name":"CENIMAT\/I3N, Departamento de Ci\u00eancia dos Materiais, Faculdade de Ci\u00eancias e Tecnologia, FCT, Universidade Nova de Lisboa and CEMOP-UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal"}]},{"given":"Lu\u00eds","family":"Pereira","sequence":"additional","affiliation":[{"name":"CENIMAT\/I3N, Departamento de Ci\u00eancia dos Materiais, Faculdade de Ci\u00eancias e Tecnologia, FCT, Universidade Nova de Lisboa and CEMOP-UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal"}]},{"given":"Emanuel","family":"Carlos","sequence":"additional","affiliation":[{"name":"CENIMAT\/I3N, Departamento de Ci\u00eancia dos Materiais, Faculdade de Ci\u00eancias e Tecnologia, FCT, Universidade Nova de Lisboa and CEMOP-UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal"}]},{"given":"Rodrigo","family":"Martins","sequence":"additional","affiliation":[{"name":"CENIMAT\/I3N, Departamento de Ci\u00eancia dos Materiais, Faculdade de Ci\u00eancias e Tecnologia, FCT, Universidade Nova de Lisboa and CEMOP-UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal"}]},{"given":"Elvira","family":"Fortunato","sequence":"additional","affiliation":[{"name":"CENIMAT\/I3N, Departamento de Ci\u00eancia dos Materiais, Faculdade de Ci\u00eancias e Tecnologia, FCT, Universidade Nova de Lisboa and CEMOP-UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal"}]}],"member":"1968","published-online":{"date-parts":[[2019,3,1]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"701","DOI":"10.1016\/0038-1101(64)90057-7","article-title":"A Tin oxide Field-Effect Transistor","volume":"7","author":"Klasens","year":"1964","journal-title":"Solid-State Electron."},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"2094","DOI":"10.1109\/PROC.1968.6813","article-title":"ZnO Field Effect Transistor","volume":"56","author":"Boesen","year":"1968","journal-title":"Proc. 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