{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,28]],"date-time":"2026-04-28T09:38:27Z","timestamp":1777369107384,"version":"3.51.4"},"reference-count":42,"publisher":"MDPI AG","issue":"9","license":[{"start":{"date-parts":[[2019,9,6]],"date-time":"2019-09-06T00:00:00Z","timestamp":1567728000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100001871","name":"Funda\u00e7\u00e3o para a Ci\u00eancia e a Tecnologia","doi-asserted-by":"publisher","award":["UID\/CTM\/50025\/2019"],"award-info":[{"award-number":["UID\/CTM\/50025\/2019"]}],"id":[{"id":"10.13039\/501100001871","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001871","name":"Funda\u00e7\u00e3o para a Ci\u00eancia e a Tecnologia","doi-asserted-by":"publisher","award":["SFRH\/BD\/116047\/2016"],"award-info":[{"award-number":["SFRH\/BD\/116047\/2016"]}],"id":[{"id":"10.13039\/501100001871","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100010686","name":"European Institute of Innovation and Technology","doi-asserted-by":"publisher","award":["IDS-FunMat-INNO project FPA2016\/EIT\/EIT Raw Materials Grant Agreement 15015"],"award-info":[{"award-number":["IDS-FunMat-INNO project FPA2016\/EIT\/EIT Raw Materials Grant Agreement 15015"]}],"id":[{"id":"10.13039\/100010686","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100010662","name":"H2020 Excellent Science","doi-asserted-by":"publisher","award":["NMP-22-2015 project 1D-NEON Grant Agreement 685758"],"award-info":[{"award-number":["NMP-22-2015 project 1D-NEON Grant Agreement 685758"]}],"id":[{"id":"10.13039\/100010662","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Nanomaterials"],"abstract":"<jats:p>Solution-processed metal oxides have been investigated as an alternative to vacuum-based oxides to implement low-cost, high-performance electronic devices on flexible transparent substrates. However, their electrical properties need to be enhanced to apply at industrial scale. Amorphous indium-gallium-zinc oxide (a-IGZO) is the most-used transparent semiconductor metal oxide as an active channel layer in thin-film transistors (TFTs), due to its superior electrical properties. The present work evaluates the influence of composition, thickness and ageing on the electrical properties of solution a-IGZO TFTs, using solution combustion synthesis method, with urea as fuel. After optimizing the semiconductor properties, low-voltage TFTs were obtained by implementing a back-surface passivated 3-layer In:Ga:Zn 3:1:1 with a solution-processed high-\u043a dielectric; AlOx. The devices show saturation mobility of 3.2 cm2 V\u22121 s\u22121, IOn\/IOff of 106, SS of 73 mV dec\u22121 and VOn of 0.18 V, thus demonstrating promising features for low-cost circuit applications.<\/jats:p>","DOI":"10.3390\/nano9091273","type":"journal-article","created":{"date-parts":[[2019,9,9]],"date-time":"2019-09-09T03:14:41Z","timestamp":1567998881000},"page":"1273","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":73,"title":["Tailoring IGZO Composition for Enhanced Fully Solution-Based Thin Film Transistors"],"prefix":"10.3390","volume":"9","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-8728-9905","authenticated-orcid":false,"given":"Marco","family":"Moreira","sequence":"first","affiliation":[{"name":"i3N\/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa and CEMOP\/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5956-5757","authenticated-orcid":false,"given":"Emanuel","family":"Carlos","sequence":"additional","affiliation":[{"name":"i3N\/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa and CEMOP\/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal"}]},{"given":"Carlos","family":"Dias","sequence":"additional","affiliation":[{"name":"i3N\/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa and CEMOP\/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2764-3124","authenticated-orcid":false,"given":"Jonas","family":"Deuermeier","sequence":"additional","affiliation":[{"name":"i3N\/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa and CEMOP\/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal"}]},{"given":"Maria","family":"Pereira","sequence":"additional","affiliation":[{"name":"i3N\/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa and CEMOP\/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5446-2759","authenticated-orcid":false,"given":"Pedro","family":"Barquinha","sequence":"additional","affiliation":[{"name":"i3N\/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa and CEMOP\/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-9771-8366","authenticated-orcid":false,"given":"Rita","family":"Branquinho","sequence":"additional","affiliation":[{"name":"i3N\/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa and CEMOP\/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal"}]},{"given":"Rodrigo","family":"Martins","sequence":"additional","affiliation":[{"name":"i3N\/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa and CEMOP\/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal"}]},{"given":"Elvira","family":"Fortunato","sequence":"additional","affiliation":[{"name":"i3N\/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa and CEMOP\/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal"}]}],"member":"1968","published-online":{"date-parts":[[2019,9,6]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"851","DOI":"10.1016\/j.jnoncrysol.2006.01.073","article-title":"Ionic amorphous oxide semiconductors: Material design, carrier transport, and device Application","volume":"352","author":"Hosono","year":"2006","journal-title":"J. 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