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Here, we study how the interaction between MXene and Polyvinylidene fluoride (PVDF) contribute to the RS phenomenon, and how different electrode materials [Ag (top) and W, ITO (bottom)] affect the conduction in these devices. Our detailed structural and electrical analyses of the composite layer reveals that the RS mechanism is related with the formation and rupture of conductive filaments pinned by the MXene sites. The W-based structure exhibits lower switching voltage (&lt;1 V) and a higher ON\/OFF resistance ratio of 15. In contrast, the ITO-based structure requires a higher bias voltage and displays a more gradual switching (ON\/OFF ratio of 3), likely due to the competition between the migration of Ag+ ions and oxygen vacancies from ITO. This work paves the way in understanding how to exploit the integration of novel two-dimensional (2D) materials with polymers for neuromorphic computing.<\/jats:p>","DOI":"10.3390\/polym17101309","type":"journal-article","created":{"date-parts":[[2025,5,12]],"date-time":"2025-05-12T04:21:23Z","timestamp":1747023683000},"page":"1309","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["Effect of Electrode Tuning on the Resistive Switching Behaviour of MXene-Based Composites"],"prefix":"10.3390","volume":"17","author":[{"ORCID":"https:\/\/orcid.org\/0009-0001-1965-1378","authenticated-orcid":false,"given":"Maria","family":"Gr\u00e1cio","sequence":"first","affiliation":[{"name":"IFIMUP, Department of Physics and Astronomy, Faculty of Sciences, University of Porto, Rua do Campo Alegre, s\/n, 4169-007 Porto, Portugal"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3030-9773","authenticated-orcid":false,"given":"Henrique","family":"Teixeira","sequence":"additional","affiliation":[{"name":"IFIMUP, Department of Physics and Astronomy, Faculty of Sciences, University of Porto, Rua do Campo Alegre, s\/n, 4169-007 Porto, Portugal"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1007-3919","authenticated-orcid":false,"given":"Catarina","family":"Dias","sequence":"additional","affiliation":[{"name":"IFIMUP, Department of Physics and Astronomy, Faculty of Sciences, University of Porto, Rua do Campo Alegre, s\/n, 4169-007 Porto, Portugal"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-0494-3009","authenticated-orcid":false,"given":"Jo\u00e3o","family":"Ventura","sequence":"additional","affiliation":[{"name":"IFIMUP, Department of Physics and Astronomy, Faculty of Sciences, University of Porto, Rua do Campo Alegre, s\/n, 4169-007 Porto, Portugal"}]}],"member":"1968","published-online":{"date-parts":[[2025,5,11]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"507","DOI":"10.1109\/TCT.1971.1083337","article-title":"Memristor\u2014The missing circuit element","volume":"18","author":"Chua","year":"1971","journal-title":"IEEE Trans. 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