{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,12,22]],"date-time":"2025-12-22T18:32:20Z","timestamp":1766428340042,"version":"build-2065373602"},"reference-count":22,"publisher":"MDPI AG","issue":"3","license":[{"start":{"date-parts":[[2011,2,25]],"date-time":"2011-02-25T00:00:00Z","timestamp":1298592000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>A compensation method for the sensitivity drift of a magnetoresistive (MR) Wheatstone bridge current sensor is proposed. The technique was carried out by placing a ruthenium temperature sensor and the MR sensor to be compensated inside a generalized impedance converter circuit (GIC). No internal modification of the sensor bridge arms is required so that the circuit is capable of compensating practical industrial sensors. The method is based on the temperature modulation of the current supplied to the bridge, which improves previous solutions based on constant current compensation. Experimental results are shown using a microfabricated spin-valve MR current sensor. The temperature compensation has been solved in the interval from 0 \u00b0C to 70 \u00b0C measuring currents from \u221210 A to +10 A.<\/jats:p>","DOI":"10.3390\/s110302447","type":"journal-article","created":{"date-parts":[[2011,2,25]],"date-time":"2011-02-25T10:46:03Z","timestamp":1298630763000},"page":"2447-2458","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":28,"title":["A Non-Invasive Thermal Drift Compensation Technique Applied to a Spin-Valve Magnetoresistive Current Sensor"],"prefix":"10.3390","volume":"11","author":[{"given":"Jaime","family":"S\u00e1nchez Moreno","sequence":"first","affiliation":[{"name":"Department of Electronic Engineering, University of Valencia, C\/ Doctor Moliner, 50, 46100-Burjassot, Spain"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-8900-1098","authenticated-orcid":false,"given":"Diego","family":"Ram\u00edrez Mu\u00f1oz","sequence":"additional","affiliation":[{"name":"Department of Electronic Engineering, University of Valencia, C\/ Doctor Moliner, 50, 46100-Burjassot, Spain"}]},{"given":"Susana","family":"Cardoso","sequence":"additional","affiliation":[{"name":"Instituto de Sistemas e Computadores\u2014Microsistemas e Nanotecnologias (INESC-MN) and Institute for Nanosciences and Nanotechnologies, R. Alves Redol 9, 1000-029 Lisbon, Portugal"}]},{"given":"Silvia","family":"Casans Berga","sequence":"additional","affiliation":[{"name":"Department of Electronic Engineering, University of Valencia, C\/ Doctor Moliner, 50, 46100-Burjassot, Spain"}]},{"given":"Asunci\u00f3n Edith","family":"Navarro Ant\u00f3n","sequence":"additional","affiliation":[{"name":"Department of Electronic Engineering, University of Valencia, C\/ Doctor Moliner, 50, 46100-Burjassot, Spain"}]},{"given":"Paulo Jorge","family":"Peixeiro de Freitas","sequence":"additional","affiliation":[{"name":"Instituto de Sistemas e Computadores\u2014Microsistemas e Nanotecnologias (INESC-MN) and Institute for Nanosciences and Nanotechnologies, R. Alves Redol 9, 1000-029 Lisbon, Portugal"}]}],"member":"1968","published-online":{"date-parts":[[2011,2,25]]},"reference":[{"key":"ref_1","unstructured":"Guo, T, Shi, Y, and Zhang, W (2005, January 1\u20134). 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