{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T01:48:06Z","timestamp":1760147286201,"version":"build-2065373602"},"reference-count":16,"publisher":"MDPI AG","issue":"3","license":[{"start":{"date-parts":[[2023,1,20]],"date-time":"2023-01-20T00:00:00Z","timestamp":1674172800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100004281","name":"National Science Centre","doi-asserted-by":"publisher","award":["2021\/41\/B\/ST7\/04504"],"award-info":[{"award-number":["2021\/41\/B\/ST7\/04504"]}],"id":[{"id":"10.13039\/501100004281","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>The sensitivity of tunneling magnetoresistance sensors is an important performance parameter. It depends on the derivative of resistance versus magnetic field (transfer curve) and the current and is expressed as the product of the two factors. Previous research has demonstrated that the bias voltage has a significant impact on the sensitivity. However, no research has been conducted into the dependence of current and the derivative on bias voltage magnitude and polarity, and their contribution to the sensitivity. Thus, this paper investigates the dependence of sensitivity, derivative of resistance versus magnetic field curve and current on bias voltage magnitude and polarity in CoFeB\/MgO\/CoFeB-based tunneling magnetoresistance sensors with weak, strong and no voltage-controlled perpendicular magnetic anisotropy modification. It demonstrates that the sensitivity dependence on bias voltage for sensors with voltage controlled magnetic anisotropy modification showed no saturation up to 1 V. Moreover, the sensitivity asymmetry with respect to bias polarity changed significantly with bias, reaching a ratio of 6.7. Importantly, the contribution of current and the derivative of resistance versus magnetic field curve to the sensitivity showed a crossover. The current dominated the bias dependence of sensitivity below the crossover voltage and the derivative above the voltage. Furthermore, the crossover voltage in sensors without voltage controlled magnetic anisotropy modification did not depend on polarity, whereas in sensors with voltage controlled magnetic anisotropy modification, it appeared at significantly higher voltage under positive than negative polarity.<\/jats:p>","DOI":"10.3390\/s23031214","type":"journal-article","created":{"date-parts":[[2023,1,20]],"date-time":"2023-01-20T06:52:41Z","timestamp":1674197561000},"page":"1214","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["Dependence of Sensitivity, Derivative of Transfer Curve and Current on Bias Voltage Magnitude and Polarity in Tunneling Magnetoresistance Sensors"],"prefix":"10.3390","volume":"23","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-8146-6803","authenticated-orcid":false,"given":"\u0141ukasz","family":"Fu\u015bnik","sequence":"first","affiliation":[{"name":"Institute of Electronics, AGH University of Science and Technology, 30-059 Krakow, Poland"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-5743-6612","authenticated-orcid":false,"given":"Bart\u0142omiej","family":"Szafraniak","sequence":"additional","affiliation":[{"name":"Institute of Electronics, AGH University of Science and Technology, 30-059 Krakow, Poland"}]},{"given":"Jerzy","family":"Wrona","sequence":"additional","affiliation":[{"name":"Singulus Technologies AG, 63796 Kahl am Main, Germany"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6913-6529","authenticated-orcid":false,"given":"Susana","family":"Cardoso","sequence":"additional","affiliation":[{"name":"INESC Microsystems and Nanotechnologies, INESC-MN, and IN, 1000-029 Lisbon, Portugal"},{"name":"Physics Department, Instituto Superior Tecnico, Universidade de Lisboa, 1600-276 Lisbon, Portugal"}]},{"given":"Paulo. P.","family":"Freitas","sequence":"additional","affiliation":[{"name":"INESC Microsystems and Nanotechnologies, INESC-MN, and IN, 1000-029 Lisbon, Portugal"},{"name":"Physics Department, Instituto Superior Tecnico, Universidade de Lisboa, 1600-276 Lisbon, Portugal"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7995-7416","authenticated-orcid":false,"given":"Piotr","family":"Wi\u015bniowski","sequence":"additional","affiliation":[{"name":"Institute of Electronics, AGH University of Science and Technology, 30-059 Krakow, Poland"}]}],"member":"1968","published-online":{"date-parts":[[2023,1,20]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"1894","DOI":"10.1109\/JPROC.2016.2578303","article-title":"Spintronic Sensors","volume":"104","author":"Freitas","year":"2016","journal-title":"Proc. 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