{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,23]],"date-time":"2025-10-23T13:24:27Z","timestamp":1761225867533,"version":"build-2065373602"},"reference-count":66,"publisher":"American Association for the Advancement of Science (AAAS)","funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["11975007"],"award-info":[{"award-number":["11975007"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["52192613"],"award-info":[{"award-number":["52192613"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"name":"Ministry of Science and Technology of China","award":["2022YFE0100800"],"award-info":[{"award-number":["2022YFE0100800"]}]},{"name":"Ministry of Science and Technology of Israel","award":["3-18130"],"award-info":[{"award-number":["3-18130"]}]}],"content-domain":{"domain":["spj.science.org"],"crossmark-restriction":true},"short-container-title":["Research"],"published-print":{"date-parts":[[2025,1]]},"abstract":"<jats:p>\n                    The ferromagnetic (FM) properties of the van der Waals charge transfer insulator CrGeTe\n                    <jats:sub>3<\/jats:sub>\n                    provide a promising avenue for concurrently controlling magnetic and electrical characteristics. This enables the potential integration of devices using nanoscale materials. In this research, we have effectively produced highly stable CrGeTe\n                    <jats:sub>3<\/jats:sub>\n                    nanosheets by utilizing a Cr\n                    <jats:sub>2<\/jats:sub>\n                    Te\n                    <jats:sub>3<\/jats:sub>\n                    template. Additionally, we show that the magnetic and electrical characteristics of CrGeTe\n                    <jats:sub>3<\/jats:sub>\n                    single crystals can be continuously adjusted through the application of pressure. Electrical transport measurements reveal that CrGeTe\n                    <jats:sub>3<\/jats:sub>\n                    transitions from an insulator under ambient conditions to a metallic state at 6.02 GPa. After reaching 25.33 GPa, CrGeTe\n                    <jats:sub>3<\/jats:sub>\n                    undergoes a phase transition from the FM state to the N\u00e9el antiferromagnetic state at 30 K. This transition highlights the important impact of pressure on exchange interactions, corroborating density functional theory calculations. Micromagnetic simulation shows that the high-pressure topological Hall effect above 25.33 GPa originates from the N\u00e9el-type skyrmion. The interaction observed between magnetic couplings and high pressure provides crucial insights into the novel topological transport phenomena and their underlying physics, which is valuable for advancing spintronics devices and other emerging electronic technologies.\n                  <\/jats:p>","DOI":"10.34133\/research.0914","type":"journal-article","created":{"date-parts":[[2025,9,12]],"date-time":"2025-09-12T04:36:52Z","timestamp":1757651812000},"update-policy":"https:\/\/doi.org\/10.34133\/aaas_crossmark_01","source":"Crossref","is-referenced-by-count":0,"title":["Nano CrGeTe\n                    <sub>3<\/sub>\n                    : Topological Hall Effect in the Metallic State under High Pressure"],"prefix":"10.34133","volume":"8","author":[{"ORCID":"https:\/\/orcid.org\/0009-0006-7593-9073","authenticated-orcid":false,"given":"Min","family":"Wang","sequence":"first","affiliation":[{"name":"School of Physical Science and Technology, \rLanzhou University, Lanzhou 730000, China."}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jijun","family":"Xue","sequence":"additional","affiliation":[{"name":"School of Physical Science and Technology, \rLanzhou University, Lanzhou 730000, China."}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Bo","family":"Zhang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, \rTsinghua University, Beijing 100084, China."}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xiaoying","family":"Wang","sequence":"additional","affiliation":[{"name":"School of Physical Science and Technology, \rLanzhou University, Lanzhou 730000, China."}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Rusen","family":"Yang","sequence":"additional","affiliation":[{"name":"School of Advanced Materials and Nanotechnology, \rXidian University, Xi\u2019an 710126, China."}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hua","family":"Pang","sequence":"additional","affiliation":[{"name":"School of Physical Science and Technology, \rLanzhou University, Lanzhou 730000, China."}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"221","published-online":{"date-parts":[[2025,10,23]]},"reference":[{"key":"e_1_3_4_2_2","doi-asserted-by":"publisher","DOI":"10.1126\/science.1102896"},{"issue":"13","key":"e_1_3_4_3_2","doi-asserted-by":"crossref","DOI":"10.1103\/PhysRevLett.105.136805","article-title":"Atomically thin MoS2: A new direct-gap semiconductor","volume":"105","author":"Mak KF","year":"2010","unstructured":"Mak KF, Lee C, Hone J, Shan J, Heinz TF. 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