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We found that owing to the band bending at the junction, electrons can be transferred from water molecules to p-type silicon and captured by the dissolved oxygen molecules in water periodically, resulting in abundant free radicals and catalytic capacity for degrading pollution such as methyl orange. We demonstrated that contact-electro-catalysis is the underlying mechanism, and it can be applied to various SWJs. Furthermore, by replacing water with methanol aqueous solution, hydrogen can be catalytically produced with low energy consumption. We anticipate that SWJ-stimulated contact-electro-catalysis will provide a new space for innovative catalytic strategies in the future.<\/jats:p>","DOI":"10.34133\/research.0940","type":"journal-article","created":{"date-parts":[[2025,9,23]],"date-time":"2025-09-23T04:35:06Z","timestamp":1758602106000},"update-policy":"https:\/\/doi.org\/10.34133\/aaas_crossmark_01","source":"Crossref","is-referenced-by-count":13,"title":["Contact-electro-catalysis at Dynamic Semiconductor\u2013Water Junctions"],"prefix":"10.34133","volume":"8","author":[{"given":"Zhanqi","family":"Liu","sequence":"first","affiliation":[{"name":"School of Physical Science and Technology, \rLanzhou University, Lanzhou 730000, China."},{"name":"Center for High-Entropy Energy and Systems, \rBeijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, China."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ziming","family":"Wang","sequence":"additional","affiliation":[{"name":"Center for High-Entropy Energy and Systems, \rBeijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, China."},{"name":"School of Nanoscience and Engineering, \rUniversity of Chinese Academy of Sciences, Beijing 100049, China."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Kaiyang","family":"Shi","sequence":"additional","affiliation":[{"name":"Center for High-Entropy Energy and Systems, \rBeijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, China."},{"name":"School of Nanoscience and Engineering, \rUniversity of Chinese Academy of Sciences, Beijing 100049, China."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Huifan","family":"Li","sequence":"additional","affiliation":[{"name":"Center for High-Entropy Energy and Systems, \rBeijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, China."},{"name":"School of Nanoscience and Engineering, \rUniversity of Chinese Academy of Sciences, Beijing 100049, China."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yusen","family":"Su","sequence":"additional","affiliation":[{"name":"Center for High-Entropy Energy and Systems, \rBeijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, China."},{"name":"School of Nanoscience and Engineering, \rUniversity of Chinese Academy of Sciences, Beijing 100049, China."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Weihua","family":"Han","sequence":"additional","affiliation":[{"name":"School of Physical Science and Technology, \rLanzhou University, Lanzhou 730000, China."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5530-0380","authenticated-orcid":true,"given":"Zhong Lin","family":"Wang","sequence":"additional","affiliation":[{"name":"Center for High-Entropy Energy and Systems, \rBeijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, China."},{"name":"School of Nanoscience and Engineering, \rUniversity of Chinese Academy of Sciences, Beijing 100049, China."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Wei","family":"Tang","sequence":"additional","affiliation":[{"name":"Center for High-Entropy Energy and Systems, \rBeijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, China."},{"name":"School of Nanoscience and Engineering, \rUniversity of Chinese Academy of Sciences, Beijing 100049, China."}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"221","published-online":{"date-parts":[[2025,10,7]]},"reference":[{"issue":"19","key":"e_1_3_4_2_2","doi-asserted-by":"crossref","first-page":"2390","DOI":"10.1063\/1.109374","article-title":"High-power InGaN\/GaN double-heterostructure violet light emitting diodes","volume":"62","author":"Nakamura S","year":"1993","unstructured":"Nakamura S, Senoh M, Mukai T. 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