{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,4,16]],"date-time":"2024-04-16T00:25:56Z","timestamp":1713227156950},"reference-count":25,"publisher":"American Institute of Mathematical Sciences (AIMS)","issue":"1","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["NHM"],"published-print":{"date-parts":[[2024]]},"abstract":"<abstract><p>In this study, a novel method enabled by estimation of initial value guess at nonequilibrium was proposed to accelerate drift-diffusion equations in semiconductor device simulation. The initial value guess was obtained by solving analytical model about electrical potential with the decoupling algorithm. By obtaining the initial value directly at the target bias voltage, the proposed method eliminated time-consuming bias ramping process in the classical method starting from the equilibrium state, thereby accelerating the whole process. The method has been applied to a junction barrier Schottky (JBS) diode for validation. Numerical results showed that the proposed method achieves convergence within 10 iterations at several reverse bias voltages, achieving significant reduction of iteration number compared to the classical method using the bias ramping process. It demonstrated that the proposed method holds high feasibility to facilitate the semiconductor device property prediction in relatively regular device structure in the case of low current. With further improvements, this method can also be applied to more complex devices.<\/p><\/abstract><\/jats:p>","DOI":"10.3934\/nhm.2024020","type":"journal-article","created":{"date-parts":[[2024,4,15]],"date-time":"2024-04-15T11:33:11Z","timestamp":1713180791000},"page":"456-474","source":"Crossref","is-referenced-by-count":0,"title":["Acceleration of solving drift-diffusion equations enabled by estimation of initial value at nonequilibrium"],"prefix":"10.3934","volume":"19","author":[{"given":"Chunlin","family":"Du","sequence":"first","affiliation":[{"name":"School of Information Science and Technology, Shanghaitech University, Shanghai 201210, China"},{"name":"School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China"},{"name":"Shanghai Institute of Microsystem and Information Technology, Chinese Academy of sciences, Shanghai 200050, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yu","family":"Zhang","sequence":"additional","affiliation":[{"name":"School of Information Science and Technology, Shanghaitech University, Shanghai 201210, China"},{"name":"School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China"},{"name":"Shanghai Institute of Microsystem and Information Technology, Chinese Academy of sciences, Shanghai 200050, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Haolan","family":"Qu","sequence":"additional","affiliation":[{"name":"School of Information Science and Technology, Shanghaitech University, Shanghai 201210, China"},{"name":"School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China"},{"name":"Shanghai Institute of Microsystem and Information Technology, Chinese Academy of sciences, Shanghai 200050, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Haowen","family":"Guo","sequence":"additional","affiliation":[{"name":"School of Information Science and Technology, Shanghaitech University, Shanghai 201210, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xinbo","family":"Zou","sequence":"additional","affiliation":[{"name":"School of Information Science and Technology, Shanghaitech University, Shanghai 201210, China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"2321","reference":[{"key":"key-10.3934\/nhm.2024020-1","doi-asserted-by":"crossref","unstructured":"D. Vasileska, S. M. Goodnick, G. Klimeck, Computational Electronics: Semiclassical and Quantum Device Modeling and Simulation<\/i>, Boca Raton: CRC press, 2017. https:\/\/doi.org\/10.1201\/b13776","DOI":"10.1201\/b13776"},{"key":"key-10.3934\/nhm.2024020-2","unstructured":"SILVACO International, ATLAS User's Manual: Device Simulation Software<\/i>, 2019."},{"key":"key-10.3934\/nhm.2024020-3","doi-asserted-by":"crossref","unstructured":"P. Farrell, N. Rotundo, D. H. Doan, M. Kantner, J. Fuhrmann, T. Koprucki, Drift-diffusion Models, in J. Piprek, Handbook of Optoelectronic Device Modeling and Simulation: Lasers, Modulators, Photodetectors, Solar Cells, and Numerical Methods, Vol. 2<\/i>, Boca Raton: CRC Press, 2017,733\u2013772. https:\/\/doi.org\/10.4324\/9781315152318<\/ext-link>","DOI":"10.4324\/9781315152318-25"},{"key":"key-10.3934\/nhm.2024020-4","doi-asserted-by":"crossref","unstructured":"S. Selberherr, Analysis and Simulation of Semiconductor Devices<\/i>, Vienna: Springer, 2012. https:\/\/doi.org\/10.1007\/978-3-7091-8752-4","DOI":"10.1007\/978-3-7091-8752-4"},{"key":"key-10.3934\/nhm.2024020-5","doi-asserted-by":"publisher","unstructured":"R. E. Bank, D. J. Rose, W. Fichtner, Numerical methods for semiconductor device simulation, IEEE Trans. Electron Devices<\/i>, 30<\/b> (1983), 1031\u20131041. https:\/\/doi.org\/10.1109\/T-ED.1983.21257","DOI":"10.1109\/T-ED.1983.21257"},{"key":"key-10.3934\/nhm.2024020-6","doi-asserted-by":"publisher","unstructured":"S. J. Polak, C. Den Heijer, W. H. A. Schilders, P. Markowich, Semiconductor device modelling from the numerical point of view, Int. J. Numer. Methods Eng.<\/i>, 24<\/b> (1987), 763\u2013838. https:\/\/doi.org\/10.1002\/nme.1620240408","DOI":"10.1002\/nme.1620240408"},{"key":"key-10.3934\/nhm.2024020-7","doi-asserted-by":"publisher","unstructured":"R. D. Lazarov, I. D. Mishev, P. S. Vassilevski, Finite volume methods for convection-diffusion problems, SIAM J. Numer. Anal.<\/i>, 33<\/b> (1996), 31\u201355. https:\/\/doi.org\/10.1137\/0733003","DOI":"10.1137\/0733003"},{"key":"key-10.3934\/nhm.2024020-8","doi-asserted-by":"publisher","unstructured":"C. Chainais-Hillairet, J. G. Liu, Y. J. Peng, Finite volume scheme for multi-dimensional drift-diffusion equations and convergence analysis, ESAIM. Math. Model. Numer. Anal.<\/i>, 37<\/b> (2003), 319\u2013338. https:\/\/doi.org\/10.1051\/m2an:2003028","DOI":"10.1051\/m2an:2003028"},{"key":"key-10.3934\/nhm.2024020-9","doi-asserted-by":"crossref","unstructured":"S. C. Han, S. M. Hong, Deep neural network for generation of the initial electrostatic potential profile, 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)<\/i>, IEEE, Udine, Italy, 2019, 1\u20134. https:\/\/doi.org\/10.1109\/SISPAD.2019.8870521<\/ext-link>","DOI":"10.1109\/SISPAD.2019.8870521"},{"key":"key-10.3934\/nhm.2024020-10","doi-asserted-by":"publisher","unstructured":"X. Jia, H. An, Y. Hu, Z. Mo, A physics-based strategy for choosing initial iterate for solving drift-diffusion equations, Comput. Math. Appl.<\/i>, 131<\/b> (2023), 1\u201313. https:\/\/doi.org\/10.1016\/j.camwa.2022.11.029","DOI":"10.1016\/j.camwa.2022.11.029"},{"key":"key-10.3934\/nhm.2024020-11","doi-asserted-by":"publisher","unstructured":"K. W. Lee, S. M. Hong, Acceleration of semiconductor device simulation using compact charge model, Solid-State Electron.<\/i>, 199<\/b> (2023), 108526. https:\/\/doi.org\/10.1016\/j.sse.2022.108526","DOI":"10.1016\/j.sse.2022.108526"},{"key":"key-10.3934\/nhm.2024020-12","doi-asserted-by":"publisher","unstructured":"Q. Zhang, Q. Wang, L. Zhang, B. Lu, A class of finite element methods with averaging techniques for solving the three-dimensional drift-diffusion model in semiconductor device simulations, J. Comput. Phys.<\/i>, 458<\/b> (2022), 111086. https:\/\/doi.org\/10.1016\/j.jcp.2022.111086","DOI":"10.1016\/j.jcp.2022.111086"},{"key":"key-10.3934\/nhm.2024020-13","doi-asserted-by":"publisher","unstructured":"J. W. Slotboom, Computer-aided two-dimensional analysis of bipolar transistors, IEEE Trans. Electron Devices<\/i>, 20<\/b> (1973), 669\u2013679. https:\/\/doi.org\/10.1109\/T-ED.1973.17727","DOI":"10.1109\/T-ED.1973.17727"},{"key":"key-10.3934\/nhm.2024020-14","doi-asserted-by":"publisher","unstructured":"M. A. der Maur, M. Povolotskyi, F. Sacconi, A. D. Carlo, TiberCAD: A new multiscale simulator for electronic and optoelectronic devices, Superlattices Microstruct.<\/i>, 41<\/b> (2007), 381\u2013385. https:\/\/doi.org\/10.1016\/j.spmi.2007.03.011","DOI":"10.1016\/j.spmi.2007.03.011"},{"key":"key-10.3934\/nhm.2024020-15","doi-asserted-by":"publisher","unstructured":"P. Farrell, D. Peschka, Nonlinear diffusion, boundary layers and nonsmoothness: Analysis of challenges in drift\u2013diffusion semiconductor simulations, Comput. Math. Appl.<\/i>, 78<\/b> (2019), 3731\u20133747. https:\/\/doi.org\/10.1016\/j.camwa.2019.06.007","DOI":"10.1016\/j.camwa.2019.06.007"},{"key":"key-10.3934\/nhm.2024020-16","doi-asserted-by":"publisher","unstructured":"S. P. Chin, C. Y. Wu, A new methodology for two-dimensional numerical simulation of semiconductor devices, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.<\/i>, 11<\/b> (1992), 1508\u20131521. https:\/\/doi.org\/10.1109\/43.180264","DOI":"10.1109\/43.180264"},{"key":"key-10.3934\/nhm.2024020-17","doi-asserted-by":"publisher","unstructured":"G. Sabui, P. J. Parbrook, M. Arredondo-Arechavala, Z. J. Shen, Modeling and simulation of bulk gallium nitride power semiconductor devices, AIP Adv.<\/i>, 6<\/b> (2016), 055006. https:\/\/doi.org\/10.1063\/1.4948794","DOI":"10.1063\/1.4948794"},{"key":"key-10.3934\/nhm.2024020-18","doi-asserted-by":"publisher","unstructured":"R. Eymard, T. Gallou\u00ebt, R. Herbin, Finite volume methods, Handb. Numer. Anal.<\/i>, 7<\/b> (2000), 713\u20131018. https:\/\/doi.org\/10.1016\/S1570-8659(00)07005-8","DOI":"10.1016\/S1570-8659(00)07005-8"},{"key":"key-10.3934\/nhm.2024020-19","unstructured":"C. Chainais-Hillairet, Entropy method and asymptotic behaviours of finite volume schemes, In: J. Fuhrmann, M. Ohlberger, C. Rohde, Finite Volumes for Complex Applications \u2166-Methods and Theoretical Aspects<\/i>, Cham: Springer, 77<\/b> (2014), 17\u201335. https:\/\/doi.org\/10.1007\/978-3-319-05684-5_2<\/ext-link>"},{"key":"key-10.3934\/nhm.2024020-20","doi-asserted-by":"publisher","unstructured":"J. J. H. Miller, W. H. A. Schilders, S. Wang, Application of finite element methods to the simulation of semiconductor devices, Rep. Prog. Phys.<\/i>, 62<\/b> (1999), 277. https:\/\/doi.org\/10.1088\/0034-4885\/62\/3\/001","DOI":"10.1088\/0034-4885\/62\/3\/001"},{"key":"key-10.3934\/nhm.2024020-21","doi-asserted-by":"publisher","unstructured":"H. K. Gummel, A self-consistent iterative scheme for one-dimensional steady state transistor calculations, IEEE Trans. Electron Devices<\/i>, 11<\/b> (1964), 455\u2013465. https:\/\/doi.org\/10.1109\/T-ED.1964.15364","DOI":"10.1109\/T-ED.1964.15364"},{"key":"key-10.3934\/nhm.2024020-22","doi-asserted-by":"crossref","unstructured":"H. C. Elman, D. J. Silvester, A. J. Wathen, Finite Elements and Fast Iterative Solvers: With Applications in Incompressible Fluid Dynamics<\/i>, 2 Eds., New York: Oxford University Press, 2014. https:\/\/doi.org\/10.1093\/acprof:oso\/9780199678792.001.0001","DOI":"10.1093\/acprof:oso\/9780199678792.001.0001"},{"key":"key-10.3934\/nhm.2024020-23","doi-asserted-by":"publisher","unstructured":"R. Radhakrishnan, J. H. Zhao, A 2-dimensional fully analytical model for design of high voltage junction barrier Schottky (JBS) diodes, Solid-State Electron.<\/i>, 63<\/b> (2011), 167\u2013176. https:\/\/doi.org\/10.1016\/j.sse.2011.06.002","DOI":"10.1016\/j.sse.2011.06.002"},{"key":"key-10.3934\/nhm.2024020-24","doi-asserted-by":"publisher","unstructured":"L. D. Benedetto, G. D. Licciardo, T. Erlbacher, A. J. Bauer, S. Bellone, Analytical model and design of 4H-SiC planar and trenched JBS diodes, IEEE Trans. Electron Devices<\/i>, 63<\/b> (2016), 2474\u20132481. https:\/\/doi.org\/10.1109\/TED.2016.2549599","DOI":"10.1109\/TED.2016.2549599"},{"key":"key-10.3934\/nhm.2024020-25","doi-asserted-by":"publisher","unstructured":"M. Mehrota, B. J. Baliga, Very low forward drop JBS rectifiers fabricated using submicron technology, IEEE Trans. Electron Devices<\/i>, 40<\/b> (1993), 2131\u20132132. https:\/\/doi.org\/10.1109\/16.239813","DOI":"10.1109\/16.239813"}],"container-title":["Networks and Heterogeneous Media"],"original-title":[],"link":[{"URL":"http:\/\/www.aimspress.com\/article\/doi\/10.3934\/nhm.2024020?viewType=html","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,4,15]],"date-time":"2024-04-15T11:33:16Z","timestamp":1713180796000},"score":1,"resource":{"primary":{"URL":"http:\/\/www.aimspress.com\/article\/doi\/10.3934\/nhm.2024020"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024]]},"references-count":25,"journal-issue":{"issue":"1","published-print":{"date-parts":[[2024]]}},"URL":"https:\/\/doi.org\/10.3934\/nhm.2024020","relation":{},"ISSN":["1556-1801"],"issn-type":[{"value":"1556-1801","type":"print"}],"subject":[],"published":{"date-parts":[[2024]]}}}