{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,9,21]],"date-time":"2025-09-21T17:54:09Z","timestamp":1758477249544,"version":"3.41.0"},"reference-count":12,"publisher":"Trans Tech Publications, Ltd.","license":[{"start":{"date-parts":[[2006,5,15]],"date-time":"2006-05-15T00:00:00Z","timestamp":1147651200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.scientific.net\/PolicyAndEthics\/PublishingPolicies"},{"start":{"date-parts":[[2006,5,15]],"date-time":"2006-05-15T00:00:00Z","timestamp":1147651200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.scientific.net\/license\/TDM_Licenser.pdf"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["MSF"],"abstract":"<jats:p>In the present work, the nature of the electrical mechanism for carrier transport in Alq3 is studied by current-voltage measurements and broadband dielectric spectroscopy. The d.c. currentvoltage characteristics at low applied electrical field exhibits a classical \u201cN\u201d shape due to interfacial states located at metal-organic interface, but tend to disappear when successive higher forward bias\nis applied. Using dielectric spectroscopy it is possible to observe that the main relaxation peak shifts to a higher frequency with the increase of the applied d.c. voltage (from approximately 100 Hz with 0 V d.c. bias to approximately 400 Hz with 6 V d.c. bias) indicating a semiconductor structure change. The logarithmic Z\u2019\u2019 vs. Z\u2019 plot has a slope about 0.7 that decreases to 0.5 with the increasing applied d.c. voltage, reaching a classic Debye relaxation. An attempt to correlate with\nsome structural changes is made.<\/jats:p>","DOI":"10.4028\/www.scientific.net\/msf.514-516.78","type":"journal-article","created":{"date-parts":[[2009,3,11]],"date-time":"2009-03-11T19:04:15Z","timestamp":1236798255000},"page":"78-82","source":"Crossref","is-referenced-by-count":1,"title":["Carrier Transport Investigation on Organic Semiconductor by Electrical DC and AC Measurements: the Case of Alq&lt;sub&gt;3&lt;\/sub&gt;"],"prefix":"10.4028","volume":"514-516","author":[{"given":"V.M.","family":"Silva","sequence":"first","affiliation":[{"name":"Universidade de Aveiro"}]},{"given":"Manuel P.F.","family":"Gra\u00e7a","sequence":"additional","affiliation":[{"name":"University of Aveiro"}]},{"given":"Joana Catarina","family":"Madaleno","sequence":"additional","affiliation":[{"name":"Universidade de Aveiro"}]},{"given":"Lu\u00eds Cadillon","family":"Costa","sequence":"additional","affiliation":[{"name":"Universidade de Aveiro"}]},{"given":"Luiz","family":"Pereira","sequence":"additional","affiliation":[{"name":"Universidade de Aveiro"}]}],"member":"2457","published-online":{"date-parts":[[2006,5,15]]},"reference":[{"key":"3098363","doi-asserted-by":"crossref","unstructured":"C. Tang and S. VanSlyke, Appl. Phys. Lett. Vol. 51 (1987) p.913.","DOI":"10.1063\/1.98799"},{"key":"3098364","doi-asserted-by":"publisher","unstructured":"M. St\u00f6\u03b2el, J. Staudigel, F. Steuber, J. Bl\u00e4ssing, J. Simmerer and A. Winnacker, Appl. Phys. Lett. Vol. 76 (2000) p.115.","DOI":"10.1063\/1.125674"},{"key":"3098365","doi-asserted-by":"crossref","unstructured":"Wofgang Br\u00fctting, Stefan Berleb and Anton G. M\u00fcckl, Org. Electronics, 2 (2001) 1.","DOI":"10.1016\/S1566-1199(01)00009-X"},{"key":"3098366","doi-asserted-by":"crossref","unstructured":"S. Berleb, W. Br\u00fctting and M. Schwoerer, Synyh. Met., 111 (2000) 341.","DOI":"10.1016\/S0379-6779(99)00361-6"},{"key":"3098367","doi-asserted-by":"crossref","unstructured":"J. Steiger, R. Schmechel and H. von Seggern, Synth. Met., 129 (2002) 1.","DOI":"10.1016\/S0379-6779(02)00012-7"},{"key":"3098368","doi-asserted-by":"crossref","unstructured":"Stefan Berleb and Wolfgang Br\u00fctting, Phys. Rev. Lett. Vol. 89 (2002) paper 286601-1.","DOI":"10.1103\/PhysRevLett.89.286601"},{"key":"3098369","unstructured":"S. Grecu, M. Bronner, A. Opitz and W. Br\u00fctting, Synth. Metals. (2005) in press."},{"key":"3098370","unstructured":"A.K. Jonscher: Dielectric Relaxation in Solids (Chelsea Dielectric Press, London, 1983)."},{"key":"3098371","unstructured":"S.J. Fonash and Ashok, Solid St. Electronics, Vol 24 (1981) p.1075."},{"key":"3098372","doi-asserted-by":"publisher","unstructured":"Seong Hyun Kim, Sang Chul Lim, Jung Hun Lee and Taehyoung Zyung, Current Appl. Phys. Vol 5 (2005) p.35.","DOI":"10.1016\/j.cap.2003.11.072"},{"key":"3098373","doi-asserted-by":"crossref","unstructured":"W. Br\u00fctting, S. Berleb and A.G. M\u00fcckl, Synth. Met. Vol. 122 (2001) p.99.","DOI":"10.1016\/S0379-6779(00)01342-4"},{"key":"3098374","unstructured":"J. Ross Macdonald: Impedance Spectroscopy: Emphasizing Solid Materials and Systems (Jonh Wiley & Sons, New York, 1987)."}],"container-title":["Materials Science Forum"],"original-title":[],"link":[{"URL":"https:\/\/www.scientific.net\/MSF.514-516.78.pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,7,3]],"date-time":"2025-07-03T20:00:20Z","timestamp":1751572820000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.scientific.net\/MSF.514-516.78"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2006,5,15]]},"references-count":12,"URL":"https:\/\/doi.org\/10.4028\/www.scientific.net\/msf.514-516.78","relation":{},"ISSN":["1662-9752"],"issn-type":[{"type":"electronic","value":"1662-9752"}],"subject":[],"published":{"date-parts":[[2006,5,15]]}}}